description: the central semiconductor cmdd4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a supermini tm surface mount package, designed for high speed switching applications. marking code: 44 maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 75 v peak repetitive reverse voltage v rrm 100 v continuous forward current i f 250 ma peak repetitive forward current i frm 500 ma forward surge current, tp=1ms i fsm 4.0 a forward surge current, tp=1 s i fsm 1.0 a power dissipation p d 275 mw operating and storage junction temperature t j ,t stg -65 to +175 c thermal resistance ja 545 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units bv r i r =5.0a 75 v bv r i r =100a 100 v i r v r =20v 25 na v f i f =5.0ma 0.62 0.72 v v f i f =100ma 1.0 v c t v r =0, f=1 mhz 4.0 pf t rr i r =i f =10ma, r l =100 ? , rec. to 1.0ma 4.0 ns cmdd4448 supermini tm high speed switching diode sod-323 case central semiconductor corp. tm r5 (9-may 2007)
central semiconductor corp. tm sod-323 - mechanical outline cmdd4448 supermini tm high speed switching diode r5 (9-may 2007) lead code: 1) cathode 2) anode marking code: 44
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